Search results for "width [Higgs particle]"
showing 10 items of 123 documents
Fabrication of long period fiber gratings of subnanometric bandwidth.
2017
This paper reports on the fabrication of long period fiber gratings having subnanometric bandwidth in the 1500 nm spectral region. Large gratings have been photo-inscribed in a high NA fiber, the grating pitch and the order of the HE cladding mode are optimized to produce gratings with a large number of periods and preventing the coupling to TE, TM or EH modes. Resonances with a FWHM of 0.83 nm and 0.68 nm have been achieved for gratings 15 and 20 cm long respectively, the free spectral range between transmission notches is 125 nm. The polarization effects and the sensitivity of the gratings to temperature and to strain variations are presented as well. © 2015 Optical Society of America Thi…
Fatigue Crack Growth Rate under Different Bending to Torsion Ratios in 10HNAP Steel
2011
The paper contains the fatigue test results of rectangular cross-section specimens made of 10HNAP steel. The specimen height to width ratio was 1.5. Bending with torsion tests were carried out for the following ratios of bending to torsional moments MaB / MaT = 0.47, 0.94, 1.87 and the loading frequency 26.5 Hz. The tests were performed in a high cycle fatigue regime for the stress ratio R = - 1 and phase shift between bending and torsion loading equal to = 0.
Optical absorption and electron paramagnetic resonance of theEα′center in amorphous silicon dioxide
2008
We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E{sub {alpha}}{sup '} point defect in amorphous silicon dioxide (a-SiO{sub 2}). This defect has been studied in {beta}-ray irradiated and thermally treated oxygen-deficient a-SiO{sub 2} materials. Our results have pointed out that the E{sub {alpha}}{sup '} center is responsible for an OA Gaussian band peaked at {approx}5.8 eV and having a full width at half maximum of {approx}0.6 eV. The estimated oscillator strength of the related electronic transition is {approx}0.14. Furthermore, we have found that this OA band is quite similar to that of the E{sub {gamma}}{sup '} center in…
The controlled growth of GaN microrods on Si(111) substrates by MOCVD
2015
Abstract In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiN x /Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 ¯ 1 } planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm −1 ) with crystal quality comparable to bu…
Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
2013
We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 mu m-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum(FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of (DXA)-X-0 emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results p…
Vacuum ultraviolet excitation of the 1.9-eV emission band related to nonbridging oxygen hole centers in silica
2004
Physical review / B 69, 153201 (2004). doi:10.1103/PhysRevB.69.153201
Focusing of surface-acoustic-wave fields on (100) GaAs surfaces
2003
Focused surface-acoustic waves (SAWs) provide a way to reach intense acoustic fields for electro- and optoacoustic applications on semiconductors. We have investigated the focusing of SAWs by interdigital transducers (IDTs) deposited on (100)-oriented GaAs substrates. The focusing IDTs have curved fingers designed to account for the acoustic anisotropy of the substrate. Different factors that affect focusing, such as the aperture angle and the configuration of the IDT fingers, were systematically addressed. We show that the focusing performance can be considerably improved by appropriate choice of the IDT metal pads, which, under appropriate conditions, create an acoustic waveguide within t…
Optimization of dual-core and microstructure fiber geometries for dispersion compensation and large mode area
2009
We investigate dual concentric core and microstructure fiber geometries for dispersion compensation. Dispersion values as large as -59 000 ps/(nm km) are achieved, over a broad wavelength range with full width at half maximum exceeding 100 nm. The trade-off between large dispersion and mode area is studied. Geometries with an effective mode area of 30 microm2 and dispersion -19 000 ps/(nm km) and 80 microm2 with -1600 ps/(nm km) are proposed.
Bandwidth Resource Management for Neural Signal Telemetry
2009
Recent advances in modern neurocomputing have shown the utmost necessity of wireless communication systems that allow real-time (RT) monitoring of neural signals meeting several requirements such as source compression and high fidelity of the received signal. Neural recordings require multielectrode probes with up to hundreds of electrodes and transmission of signals wirelessly over a limited bandwidth (BW). In this paper, a RT resource management algorithm is proposed so that adequate source compression is applied to each channel in order to fit them into the available BW. Performance of the algorithm is analyzed using dynamically changing BW and neural recordings with different neural act…
Nuclear physics with ion traps at ISOLDE: present and future
1993
Nuclear physics experiments with ion traps started at the on-line separator ISOLDE/CERN, Geneva, with the installation of the tandem Penning trap mass spectrometer ISOLTRAP. With this device the massM of a stored ion is determined by measuring its cyclotron frequency θc=(q/M)B in a magnetic fieldB. Mass measurements with a resolving powerR=θc/Δθc(FWHM)≈1×106 and accuracies of δM/M≈10−7 were performed on more than sixty unstable isotopes of the elements Rb, Sr, Cs, Ba, Fr, and Ra.